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1-1-2 Switching Mode Regulator ICs
SI-8011NVS Surface-Mount, Synchronous Rectifier Step-down Switching Mode Regulator Control ICs
Features
* Surface-mount package (TSSOP24) * High efficiency due to synchronous rectification: 93% (at VIN = 5V, IO = 1A, VO = 2.5V) * Capable of downsize a choke-coil due to IC's high switching frequency (125kHz typ, On Time Control). (Compared with conventional Sanken devices) * Low reference voltage (Vref) of 1.1V. The output voltage is variable from 1.1V to 6V. * High-speed response to a load * Compatible with low ESR capacitors * Soft start and output ON/OFF available * Built-in overcurrent protection circuit * PWRGD function to indicate the output voltage status * High precision reference voltage: 1.1V 1.2%
Absolute Maximum Ratings
Parameter Control-System DC Input Voltage DC Input Voltage Boost Block Input Voltage EN Terminal Input Voltage PWRGD Terminal Applied Voltage Junction Temperature Storage Temperature Symbol VCC VIN VH VEN VPWRGD Tj Tstg Ratings 7 25 30 VCC 7 +150 -40 to +150 Unit V V V V V C C
(Ta=25C)
Applications
* Power supplies for notebook PCs and mobile devices * Onboard local power supplies * OA equipment * For stabilization of the secondary-side output voltage of switching power supplies
Recommended Operating Conditions
Parameter Control System Input Voltage Range Input Voltage Range Output Voltage Range Operating Temperature Range Symbol VCC VIN VO Top Ratings 4.5 to 5.5 3 to 18 1.1 to 6 -20 to +85 Unit V V V C
Electrical Characteristics
Parameter Dynamic Output Voltage Circuit Current (VCC Terminal) Circuit Current Circuit Current (VIN Terminal) Standby Current 1 (VCC Terminal) Standby Current 2 (VIN Terminal) Undervoltage UVLO Operating Voltage 1 (VCC Terminal) Lockout On Time Control High Side Drive Low Side Drive Bootstrap UVLO Operating Voltage 2 (VIN Terminal) On Time Minimum Off Time REF Terminal Voltage REF Terminal Source Current On Resistance (high side) On Resistance (low side) On Resistance (high side) On Resistance (low side) Bootstrap Voltage Current for Current Limit Detection Soft Start Terminal Current EN Low Level Voltage EN High Level Voltage Protection System EN Bias Level Current PWRGD Good Voltage (high side) PWRGD Good Voltage (low side) PWRGD Low Output Voltage PWRGD Terminal Current PWRGD Leakage Current Symbol VO VO/T Iop Iop Istd1 Istd2 Vuvlo1 Vuvlo2 Ton Toff Vref Iref RonHH RonHL RonLH RonLL VH-VLIN Ilim Iss Vcelo Vcehi ICE Vsens Vsens Vpwrgd Ipwrgd Ipwrgd 1.32 0.88 0.4 120 5 0 2.4 4.5 90 5.5 5.5 5.5 5.5 5 100 20 0.8 VCC 5 5.5 110 1.1 3.7 2.5 2 1 1.2 1.3 100 Ratings min. -1.2% typ. 1.1 0.03 6 1 100 50 4.4 2.9 max. +1.2% Unit V mV/C mA mA
(Ta = 25C unless otherwise specified) Conditions VIN=5V, VCC=5V, VSNS connected to VO, IO=0A VIN=5V, VCC=5V, VSNS connected to VO, IO=0A, Ta=0 to 85C VCC=5V, EN=H, FADJ:open VIN=5V, EN=H VCC=5V, EN=L VIN=5V, EN=L VIN=5V VCC=5V VCC=5V, VIN=5V, VO=2.5V VCC=5V VCC=5V VCC=5V VH-VLIN=5V VH-VLIN=5V VCC=5V VCC=5V VCC=5V, VIN=5V VCC=5V VCC=5V VCC=5V VCC=5V, EN=5V VCC=5V VCC=5V VCC=5V, Ipwrgd=120A VCC=5V, Vpwrgd=0.4V Vpwrgd=5V
Characteristics Temperature Coefficient of Output Voltage
A A
V V
S S
V
A
V
A A
V V
A
V V V
A A
78
ICs
SI-8011NVS
External Dimensions (TSSOP24)
2.0 Mirror surface Depth 0.02 to 0.08 A
11
(Unit : mm)
1.0 Mirror surface Depth 0.02 to 0.08
5.600.1 7.60.2 (6.4)
1.90
3.00
1
12
11
0.375 TYP
0.65 0.22+0.1 -0.05 7.800.1 7.90.2
1.150.05
0.15 -0.05
+0.1
0.12 M
A 0.4
11
11
11
11
24
13
11
0.100.05
S
11
0.08 S
0.500.2
Plastic Mold Package Type Flammability: UL94V-0 Product Mass: Approx. 1.36g
0~10
Block Diagram (Pin Assignment)
VIN
+
+5V VCC1 ILIM VIN ISEN VCC2
OCP PRE_REG EN H : ON L : OFF EN Vpreg Level Shift VH Latch Buff DRVH VO Synchronous Cont. (Logic) LIN
+
UVLO
Gate Driver OFF Clamp
POWER_GOOD H : GOOD L : NG
PWRGD
Power Good
- +
Logic
Buff DRVL PGND
Switching Constant On Time Cont.
+ COMP -
VO VSNS
- +
OSC
SS OVP_SL
GND
FADJ Open : Change Frequency Short : 400KHz Operation
FSET
14
SS
12
SKIP Open : Skip Mode L : No Skip Mode
Typical Connection Diagram
VIN R2 VCC : 5V D2 : SFPL52 C7 : 0.1 F C1 : 10 F
R1 5m R5 10
1 2 3 4 C6 0.1 ~ 1 F C9 1000 pF 5 6 7 8 VCC R7 47k PWRGD 11 12 R10 2.2k R9 9 10
NC DRVH VH VIN ISEN ILIN SI-8011NVS GND VSNS VO PWRGD REF NC
NC LIN DRVL PGND VCC2 LOSDACT VCC1 SS EN SKIP FADJ NC
24 23 22 21 20 19 18 Q2 R6 10
Q1 L1 : 10 H VO + D1 SJPJ-L3 C2 : 330 F
C5 : 4.7 F R3 : 20 C4 : 3.3 F VCC EN SKIP R4 47k C3 0.1 F
17 C8 : 220pF 16 15 14 13
MOS FET Q1, Q2 * Be sure to use logic type MOS FET as Q1 and Q2. If you use a normal power MOS FET type, the ON resistance may not drop to a satisfactory level due to a shortage of VGS. This may deteriorate the efficiency and cause overheating. Diode D1 * Be sure to use a Schottky-barrier diode for D1. If other diodes like fast recovery diodes are used, IC may be destroyed because of the reverse voltage generated by the recovery voltage or ON voltage. Choke coil L1 * If the winding resistance of the choke coil is too high, the efficiency may drop below the rated value. * Take care concerning heat radiation from the choke coil caused by magnetic saturation due to overload or short-circuit load. Capacitor C1, C2 * As large ripple currents flow through C1 and C2, use high-frequency and lowimpedance capacitors aiming for switching-mode-power-supply use. Especially when the impedance of C2 is high, the switching waveform may become abnormal at low temperatures. For C2, do not use a capacitor with an extremely low equivalent series resistance (ESR) such as a ceramic capacitor, which may cause an abnormal oscillation. * To create the optimum operating conditions, place the components as close as possible to each other.
R11 : 100k R8 : 200k
ICs
79

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